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| NTE2303 Silicon NPN Transistor Horizontal Deflection Description: The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen black and white deflection circuits. Features: D Collector-Emitter Voltage: VCEX = 1500V D Glassivated Base-Collector Junction D Switching Times with Inductive Loads: tf = 0.65s (Typ) @ IC = 2A Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V Collector-Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +125C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics (Note 1) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) IC = 2A, IB = 660mA IC = 2A, IB = 660mA - - - - 5.0 1.5 V V VCEO(sus) IC = 50mA, IB = 0 ICES IEBO VCE = 1500V, VBE = 0 VEB = 5V, IC = 0 750 - - - - - - 1.0 0.1 V mA mA Symbol Test Conditions Min Typ Max Unit Note 1 Pulse Test: Pulse Width 300s, Duty Cycle = 2%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Dynamic Characteristics Output Capacitance Current Gain-Bandwidth Product Switching Characteristics Fall Time tf IC = 2A, IB1 = 600mA, LB = 12H - 0.65 - s Cob fT VCB = 10V, IE = 0, f = 0.1MHz VCE = 5V, Ic = 100mA, ftest = 1MHz, Note 1 - - 50 4.0 - - pF MHz Symbol Test Conditions Min Typ Max Unit Note 1 Pulse Test: Pulse Width 300s, Duty Cycle = 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab |
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